QL65I7S-B-S Datasheet | QSI

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65I7S-A/B/C-S Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 .QSILaser. QL65I7S-A/B/C-S In Ga Al P Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 1 May. 2008 - OVERVIEW QL65I7S-A/B/C-S is a MOCVD grown 650nm band In Ga Al P laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 35m W for optoelectronic devices such as DVD-RAM and Inderstrial Sensor. - APPLICATION - Inderstrial Sensor - DVD-RAM - Features - Visible Light Output : λp = 658 nm(typ.) - Optical Power Output : 35m W CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode - ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65I7SA-S Fig. 2 QL65I7SB-S Fig. 3 QL65I7SC-S -...