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QL78D6S-A - LASER DIODE

Key Features

  • Lasing Wavelength : p = 780nm Optical Power Output : 5 CW Package Type : TO-18 (5.6mmΦ) Built-in Photo Diode for Monitoring Laser Output.

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Datasheet Details

Part number QL78D6S-A
Manufacturer QSI
File Size 84.80 KB
Description LASER DIODE
Datasheet download datasheet QL78D6S-A Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL78D6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL78D6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd Ver.0 JAN 2004 OVERVIEW QL78D6S-A/B/C is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for industrial optical module and sensor applications. APPLICATION CD-P FEATURES Lasing Wavelength : p = 780nm Optical Power Output : 5 CW Package Type : TO-18 (5.6mmΦ) Built-in Photo Diode for Monitoring Laser Output ELECTRICAL CONNECTION Bottom View Pin Configuration Fig.