Overview: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL78D6S-A/B/C Signature of Approval
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315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
.QSILaser. QL78D6S-A/B/C
AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd
Ver.0 JAN 2004 OVERVIEW
QL78D6S-A/B/C is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for industrial optical module and sensor applications.
