QL85H6S-C Datasheet | QSI

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : .. Model : QL85H6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 .QSILaser. QL85H6S-A/B/C Al Ga As Laser Diode Quantum Semiconductor International Co., Ltd. Ver.3 APR.2005 .. - OVERVIEW QL85H6SA is a MOCVD grown 850nm band Al Ga As laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 20m W for industrial optical module and sensor applications. - APPLICATION - Sensor - Industrial Optical Module - Features - Visible Light Output - Optical Power Output - Package Type : : : λp = 850 nm 20m W CW TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode - ELECTRICAL CONNECTION Bottom View Pin Configuration LD cathode, PD anode (Fig. 1) LD , PD anode (Fig. 2) LD anode, PD cathode (Fig. 3) Fig. 1 QL85H6SA Fig. 2...