QL85J6S-B-L Datasheet | QSI

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL85J6S-A/B/C-L Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 .QSILaser. QL85J6S-A/B/C-L Al Ga As Laser Diode Quantum Semiconductor International Co., Ltd. Ver.1 Aug. 2005 - OVERVIEW QL85J6S-A/B/C-L is a MOCVD grown 850nm band Al Ga As laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 40m W for industrial optical module and sensor applications. - APPLICATION - Sensor - Industrial Optical Module - Features - Visible Light Output : λp = 850 nm - Optical Power Output : 40m W CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode - ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL85J6SA-L Fig. 2 QL85J6SB-L Fig. 3...