QT Optoelectronics 4N33
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.- Channels : 1
- Max Operating Temp : 100°C
- Min Operating Temp : -55°C
Source:
Octopart
DESCRIPTION
4N29 4N30 4N31 4N32 4N33FEATURES
● High sensitivity to low input drive current● Meets or exceeds all JEDEC Registered Specifications
● VDE 0884 approval available as a test option -add option .300. (e.g., 4N29.300) SCHEMATIC ANODE 1 6 BASE
APPLICATIONS
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● Low power logic circuits Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials and impedances. CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER Continuous Forward Current Reverse Voltage (TA = 25°C Unless otherwise specified.) Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD BVCEO BVCBO BVECO PD IC Value -55 to +150 -55 to +100 260 for 10 sec 250 3.3 80 3 3.0 150 2.0 30 30 5 150 2.0 150 Units °C °C °C mW mW/°C mA V A mW mW/°C V V V mW mW/°C mA Forward Current - Peak (300 µs, 2% Duty Cyc...