CNW82 Overview
The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.
CNW82 Key Features
- Wide body DIL encapsulation, with a pin distance of 10.16 mm
- Minimum creepage distance 10 mm
- High current transfer ratio and Low Saturation Voltage
- High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC))
- Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only)
- An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum
- Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only)
- Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only)
- UL recognized (File # E90700)