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CNW82 - WIDE BODY/ HIGH ISOLATION OPTOCOUPLERS

Datasheet Summary

Description

The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor.

The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.

Features

  • Wide body DIL encapsulation, with a pin distance of 10.16 mm.
  • Minimum creepage distance 10 mm.
  • High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits.
  • High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)).
  • Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only).
  • An external clearance 0f 9.6 mm minimum and an external creepage distance of.

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Datasheet Details

Part number CNW82
Manufacturer QT Optoelectronics
File Size 53.61 KB
Description WIDE BODY/ HIGH ISOLATION OPTOCOUPLERS
Datasheet download datasheet CNW82 Datasheet
Additional preview pages of the CNW82 datasheet.

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Other Datasheets by QT Optoelectronics
  • CNW83 - WIDE BODY/ HIGH ISOLATION OPTOCOUPLERS
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  • CNW85 - WIDE BODY/ HIGH ISOLATION OPTOCOUPLERS

Full PDF Text Transcription

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WIDE BODY, HIGH ISOLATION OPTOCOUPLERS DESCRIPTION The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity. 6 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm. • Minimum creepage distance 10 mm. • High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits. • High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)). • Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only). • An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum.
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