• Part: CNY28
  • Description: SLOTTED OPTICAL SWITCH
  • Manufacturer: QT Optoelectronics
  • Size: 143.51 KB
Download CNY28 Datasheet PDF
QT Optoelectronics
CNY28
CNY28 is SLOTTED OPTICAL SWITCH manufactured by QT Optoelectronics.
DESCRIPTION The CNY28 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The gap in the housing provides a means of interrupting the signal with tape, cards, shaft encoders or other opaque material, switching the output from an “ON” to an “OFF” state. w w .D w t a S a e h t e U 4 1 2 .c m o SCHEMATIC FEATURES - - - - Opaque housing Low cost 0.035” apertures European “Pro Electron” registered  2001 Fairchild Semiconductor Corporation DS300281 5/24/01 w 1 OF 4 w w .D a S a t e e h U 4 t m o .c .fairchildsemi. PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH CNY28 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature INPUT (EMITTER) Continuous Forward Current Reverse Voltage Power Dissipation(1) OUTPUT (SENSOR) Collector-Emitter Voltage Emitter- Collector Voltage Collector Current Power Dissipation(1) NOTES: 1. 2. 3. 4. Derate power dissipation linearly 1.67 m W/°C above 25°C. RMA flux is remended. Methanol or isopropyl alcohols are remended as cleaning agents. Soldering iron 1/16” (1.6mm) from housing. VCEO VECO IC PD 30 4.5 20 150 V V m A m W IF VR PD 50 6 100 m A V m W (Flow)(2,3) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F Rating -55 to +85 - 55 to +85 240 for 5 sec 260 for 10 sec Units °C °C °C °C ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA = 25°C) SYMBOL MIN TYP MAX UNITS INPUT (EMITTER) Forward Voltage Reverse Leakage Current OUTPUT (SENSOR) Emitter-Collector Breakdown Collector-Emitter Breakdown Collector-Emitter Leakage COUPLED Collector Current Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time IF = 30 m A, VCC = 5 V, RL = 2.5 k1 IF = 30 m A, VCC = 5 V, RL = 2.5 k1 ton toff - - 5 5 - - µs µs IF = 20 m A, VCE = 10 V IF = 20 m A, IC = 25 µA IC(ON) VCE (SAT) 0.20 - - - - 0.40 m A V IE = 100 µA, Ee = 0 IC = 10 m A, Ee = 0 VCE = 10 V, Ee = 0 BVECO...