QED122 Datasheet | QT Optoelectronics

FEATURES - != 880 nm REFERENCE SURFACE 0.305 (7.75) - Chip material = Al Ga As - Package type: T-1 3/4 (5mm lens diameter) - Matched Photosensor: QSD122/123/124 0.040 (1.02) NOM 0.800 (20.3) MIN - Narrow Emission Angle, 18° - High Output Power - Package material and color: Clear, peach tinted, plastic 0.050 (1.25) CATHODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) NOTES: 1. Derate power dissipation linearly 2.67 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) minimum from housing. SCHEMATIC ANODE 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. CATHODE ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD (TA =25°C) MIN TYP MAX UNITS Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 200 Unit °C °C °C °C m A V m W ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QED121 Radiant Intensity QED122 Radiant Intensity QED123 Rise Time Fall Time IF = 100 m A IF = 100 m A IF = 100 m A, tp = 20 ms VR = 5 V IF = 100 m A, tp = 20 ms IF = 100 m A, tp = 20 ms IF = 100 m A, tp = 20 ms IF = 100 m A !PE " VF IR IE IE IE tr tf - - - - 20 50 80 - - 880 ±9 - - - - - 800 800 - - 1.7 10 40 100 - -...