HYS64T256022EDL-3-B Datasheet PDF (200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules)

HYS64T256022EDL-3-B - 200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules

This page provides the datasheet information for the HYS64T256022EDL-3-B, a member of the HYS64T256022EDL-25F-B 200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules family.

Description

The memory array is designed with stacked 1 Gbit DoubleData-Rate-Two (DDR2) Synchronous DRAMs.

Decoupling capacitors are mounted on the PCB.

The DIMMs feature serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol.

Features

Programmable self refresh rate via EMRS2 setting.
Programmable partial array refresh via EMRS2 settings.
Average Refresh Period 7.8 µs at a TCASE lower than 85°C, 3.9µs between 85°C and 95°C.
DCC enabling via EMRS2 setting.
All inputs and outputs SSTL_18 compatible.
Off-Chip Driver Impedance Adjustment (OCD) and On-Die Termination (ODT).
Serial Presence Detect with E2PROM.
SO-DIMM Dimensions (nominal): 30 mm high, 67.6 mm.

Datasheet Details

Part number	HYS64T256022EDL-3-B
Manufacturer	Qimonda AG
File Size	2.40 MB
Description	200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules
Datasheet	HYS64T256022EDL-3-B Datasheet
Additional preview pages of the HYS64T256022EDL-3-B datasheet.

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Full PDF Text Transcription

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November 2006 www.DataSheet4U.com HYS64T256022EDL–[25F/2.5]–B HYS64T256022EDL–[3/3S]–B HYS64T256022EDL–3.7–B 200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules DDR2 SDRAM SO-DIMM SDRAM RoHS Compliant Internet Data Sheet Rev. 1.0 Internet Data Sheet www.DataSheet4U.com HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B Small Outline DDR2 SDRAM Modules HYS64T256022EDL–[25F/2.5]–B; HYS64T256022EDL–[3/3S]–B; HYS64T256022EDL–3.7–B Revision History: 2006-11, Rev. 1.0 Page All All Subjects (major changes since last revision) Adapted internet edition Initial Document We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document.

Published: Apr 28, 2010 |