• Part: HYB25DC256163CE-4
  • Manufacturer: Qimonda
  • Size: 677.92 KB
Download HYB25DC256163CE-4 Datasheet PDF
HYB25DC256163CE-4 page 2
Page 2
HYB25DC256163CE-4 page 3
Page 3

HYB25DC256163CE-4 Key Features

  • Double data rate architecture: two data transfers per clock cycle
  • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
  • DQS is edge-aligned with data for reads and is center-aligned with data for writes
  • Differential clock inputs (CK and CK)
  • Four internal banks for concurrent operation
  • Data mask (DM) for write data
  • DLL aligns DQ and DQS transitions with CK transitions
  • mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
  • Burst Lengths: 2, 4, or 8
  • CAS Latency: 3

HYB25DC256163CE-4 Description

The 256-Mbit Double-Data-Rate SGRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The 256-Mbit Double-Data-Rate SGRAM uses a double-data-rate architecture to achieve high-speed operation.