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QPA0708T Datasheet 60Watt GaN Power Amplifier

Manufacturer: Qorvo

General Description

7.9 – 8.4 GHz GaN Amplifier (20 Pcs.) QPA0708TEVB QPA0708T Evaluation Board VG1 VG2 VG3 VD1 VD2 VD3 Data Sheet Rev.

A, February 2024 | Subject to change without notice 1 of 24 www.qorvo.com QPA0708T ® 7.9 –8.4 GHz 60 Watt GaN Power Amplifier Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) 29.5 V Gate Voltage Range (VG) −4 V to 0 V Drain Current (ID1), Stage 1 0.36 A Drain Current (ID2), Stage 2 1.6 A Drain Current (ID2), Stage 3 11.52 A Gate Current (IG) See plot pg.

18 Power Dissipation (PDISS), 85 °C 100 W Input Power (PIN), 50 Ω, VD=22 V, IDQ=280 mA, 85 °C 29 dBm Input Power (PIN), 3:1 VSWR

Overview

QPA0708T ® 7.9 –8.4 GHz 60 Watt GaN Power Amplifier Product Overview Qorvo's QPA0708T is a power amplifier fabricated on Qorvo's 0.25um GaN on SiC process (QGaN25), mounted to a high thermal conductivity tab.

Operating between 7.9 and 8.4 GHz, it achieves 36 dB small signal gain, 32 W linear power with −25 dBc intermodulation distortion products, and saturated output power of 72 W with a poweradded efficiency of 49.3 %.

QPA0708T is ideally suited to support satellite communications.

Key Features

  • Frequency Range: 7.9 .
  •  8.4 GHz.
  • PSAT (PIN=18 dBm): 48.6 dBm.
  • PAE (PIN=18 dBm): 49.3 %.
  • Power Gain (PIN=18 dBm): 30.6 dB.
  • IMD3 (at 42 dBm/tone):.
  • 25 dBc.
  • Small Signal Gain: 36 dB.
  • Bias: VD = 26 V, IDQ = 904 mA.
  • Tab dimensions: 5.817 mm x 6.172 mm x 0.254 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. VG1 VG2 VG3 VD1 VD2 VD3 Applic.