QPA3070 Datasheet | Qorvo

Preliminary ® - 3.5 GHz 150 W Ga N Power Amplifier Product Overview Qorvo’s QPA3070 is a packaged, high-power S-band amplifier fabricated on Qorvo’s production 0.25 um Ga N on Si C process (QGa N25HV). Covering 2.9 -  3.5 GHz, the QPA3070 provides 52 d Bm of saturated output power and 28 d B of large-signal gain while achieving 58% poweradded efficiency. The QPA3070 is packaged in a 7 mm x 7 mm 48-pin plastic overmolded package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA3070 MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3070 is ideal for military radar systems. Lead-free and Ro HS pliant. Key Features - Frequency Range: 2.9 -  3.5 GHz - PSAT (PIN=24 d Bm): 52 d Bm - PAE (PIN=24 d Bm): 58 % - Power Gain (PIN=24 d Bm): 28 d B - Bias: VD = 50 V, IDQ = 422 m A - Package Dimensions:7.00 x 7.00 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 48 47 46 45 44 43 42 41 40 39 38 37 1 2 3 4 5 RF In 6 RF In 7 8 9 10 11 12 36 35 34 33 32 31 RF Out 30 RF Out 29 28 27 26 25 13 14 15 16 17 18 19 20 21 22 23 24 Top View Applications - Radar Ordering Information Part No. QPA3070TR7 QPA3070EVB02 Description - 3.5 GHz 150 W Ga N Power Amplifier (10 Pcs.) 250 piece 7” reel Evaluation Board for...