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QPA3070 - 150W GaN Power Amplifier

General Description

2.9

Data Sheet Rev.

© 2020 Qorvo US, Inc.

All rights reserved.

3.5 GHz

Key Features

  • Frequency Range: 2.9 .
  •  3.5 GHz.
  • PSAT (PIN=24 dBm): 52 dBm.
  • PAE (PIN=24 dBm): 58 %.
  • Power Gain (PIN=24 dBm): 28 dB.
  • Bias: VD = 50 V, IDQ = 422 mA.
  • Package Dimensions:7.00 x 7.00 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 48 47 46 45 44 43 42 41 40 39 38 37 1 2 3 4 5 RF In 6 RF In 7 8 9 10 11 12 36 35 34 33 32 31 RF Out.

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Datasheet Details

Part number QPA3070
Manufacturer Qorvo
File Size 755.49 KB
Description 150W GaN Power Amplifier
Datasheet download datasheet QPA3070 Datasheet

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Preliminary QPA3070 ® 2.9 – 3.5 GHz 150 W GaN Power Amplifier Product Overview Qorvo’s QPA3070 is a packaged, high-power S-band amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process (QGaN25HV). Covering 2.9 – 3.5 GHz, the QPA3070 provides 52 dBm of saturated output power and 28 dB of large-signal gain while achieving 58% poweradded efficiency. The QPA3070 is packaged in a 7 mm x 7 mm 48-pin plastic overmolded package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA3070 MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3070 is ideal for military radar systems. Lead-free and RoHS compliant.