QPA9970D Key Features
- Broadband Operation DC to 10 GHz
- Advanced GaN HEMT Technology
- Small Signal Gain = 21.4 dB at 2.14 GHz
- 28 V Typical Performance
- Output Power 4.3 W at P3dB
- Drain Efficiency 60% at P3dB
- Dimensions
QPA9970D is 4.3W GaN on SiC Power Amplifier Die manufactured by Qorvo.
| Part Number | Description |
|---|---|
| QPA9901 | 4W High-Efficiency Amplifier |
| QPA9907 | 4W High-Efficiency Amplifier |
| QPA9940 | 4W High-Efficiency Amplifier |
| QPA9942 | 4W High-Efficiency Amplifier |
| QPA9119 | High Linearity Amplifier |
4.3 W GaN on SiC PA Data Sheet-Rev(A), February 4, 2019| Subject to change without notice - 1 of 8 - .qorvo. Exceeding any one or a bination of the Rating conditions may cause permanent damage to the device. Extended application of Rating conditions to the device may reduce device reliability.