QPD0005M Key Features
- Operating Frequency Range: 2.5
- 5.0 GHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (PSAT): 39.1 dBm (1)
- Maximum Drain Efficiency: 71.4% (1)
- Efficiency-Tuned P3dB Gain: 17.8 dB (1)
- 4.5 x 4.0 mm DFN Package Notes
QPD0005M is GaN RF Transistor manufactured by Qorvo.
| Part Number | Description |
|---|---|
| QPD0012 | Asymmetric Doherty |
| QPD0030 | GaN RF Power Transistor |
| QPD0305 | Dual GaN RF Transistor |
| QPD1003 | GaN RF IMFET |
| QPD1006 | RF IMFET |
Short Reel 100 Pieces 3.4 3.6 GHz Evaluation Board 3.2 3.8 GHz Evaluation Board 3.7 4.0 GHz Evaluation Board 2.5 2.7 GHz Evaluation Board Data Sheet Rev. B, December 2021 Subject to change without notice | All rights reserved 1 of 16 .qorvo. Extended application of Rating conditions to the device may reduce device reliability.