QPD0005M - GaN RF Transistor

Qorvo

General Description

Short Reel 100 Pieces 3.4 3.6 GHz Evaluation Board 3.2 3.8 GHz Evaluation Board 3.7 4.0 GHz Evaluation Board 2.5

Data Sheet Rev.

Key Features

Operating Frequency Range: 2.5.
5.0 GHz.
Operating Drain Voltage: +48 V.
Maximum Output Power (PSAT): 39.1 dBm (1).
Maximum Drain Efficiency: 71.4% (1).
Efficiency-Tuned P3dB Gain: 17.8 dB (1).
4.5 x 4.0 mm DFN Package Notes: 1. Load pull at 3.6 GHz Functional Block Diagram.

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QPD0005M gan rf transistor by Qorvo - Datasheet Preview

Datasheet Details

Part number	QPD0005M
Manufacturer	Qorvo
File Size	1.60 MB
Description	GaN RF Transistor
Datasheet	QPD0005M Datasheet

Full PDF Text Transcription for QPD0005M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QPD0005M. For precise diagrams, and layout, please refer to the original PDF.

QPD0005M ® 8 W, 48 V, 2.5 – 5.0 GHz, GaN RF Transistor Product Overview The QPD0005M is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which ope...

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h discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8 W at +48 V operation. Lead free and RoHS compliant. 6 Pin 4.5 x 4.0 mm DFN Package Key Features  Operating Frequency Range: 2.5 – 5.0 GHz  Operating Drain Voltage: +48 V  Maximum Output Power (PSAT): 39.1 dBm (1)  Maximum Drain Efficiency: 71.4% (1)  Efficiency-Tuned P3dB Gain: 17.8 dB (1)  4.5 x 4.0 mm DFN Package Notes: 1. Load pull at 3.

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