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QPD0012 - Asymmetric Doherty

General Description

7” Reel 100 Pieces Production Evaluation Board Kit 1 of 9 www.qorvo.com QPD0012 ® 20 W / 40 W, 48 V, 2.5 2.7 GHz, Asymmetric Doherty Absolute Maximum Ratings Recommended Operating Conditions Parameter Breakdown Voltage (BVDG) Gate Voltage Range (VG1,2) Drain Voltage (VD1,

Key Features

  • Operating Frequency Range: 2.5.
  • 2.7 GHz.
  • Operating Drain Voltage: +48 V.
  • Peak Doherty Output Power: 47.3 dBm.
  • Doherty Drain Efficiency at 38.8 dBm: 59%.
  • Doherty Gain at 38.8 dBm: 14.8 dB.
  • 7.0 x 6.5 mm DFN Package Functional Block Diagram.

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Datasheet Details

Part number QPD0012
Manufacturer Qorvo
File Size 935.97 KB
Description Asymmetric Doherty
Datasheet download datasheet QPD0012 Datasheet

Full PDF Text Transcription for QPD0012 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QPD0012. For precise diagrams, and layout, please refer to the original PDF.

QPD0012 ® 20 W / 40 W, 48 V, 2.5 – 2.7 GHz, Asymmetric Doherty Transistor Product Overview The QPD0012 is a dual-path discrete GaN on SiC HEMT in DFN package which operat...

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12 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 2.5 to 2.7 GHz. The device is a single-stage power amplifier transistor for Doherty application. QPD0012 can deliver PAVG of 7.6 W at +48 V operation. Lead-free and RoHS compliant. 6 Pin 7.0 x 6.5 mm DFN Package Key Features • Operating Frequency Range: 2.5 – 2.7 GHz • Operating Drain Voltage: +48 V • Peak Doherty Output Power: 47.3 dBm • Doherty Drain Efficiency at 38.8 dBm: 59% • Doherty Gain at 38.8 dBm: 14.8 dB • 7.0 x 6.

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