QPD1026L - GaN RF Input-Matched Transistor

Qorvo

General Description

420 450 MHz Transistor 432

Datasheet Rev.

450 MHz, GaN RF Input-Matched Transistor Absolute Maximum Ratings 1, 2, 3 Recommended Operating C

Key Features

Frequency: 420 to 450 MHz.
Output Power (P3dB)1: 1318 W.
Linear Gain1: 25.9 dB.
Typical PAE3dB1: 80.8 %.
Operating Voltage: 65 V.
CW and Pulse capable Note 1: @ 440 MHz Load Pull.

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QPD1026L gan rf input-matched transistor by Qorvo - Datasheet Preview

Datasheet Details

Part number	QPD1026L
Manufacturer	Qorvo
File Size	1.85 MB
Description	GaN RF Input-Matched Transistor
Datasheet	QPD1026L Datasheet

Full PDF Text Transcription for QPD1026L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QPD1026L. For precise diagrams, and layout, please refer to the original PDF.

QPD1026L 1300 W, 65 V, 420 – 450 MHz, GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from ...

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1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from 420 to 450 MHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for amateur radio, public safety radio and radiolocation service. The device can support both CW and pulsed operations. RoHS compliant Evaluation boards are available upon request. 4-lead NI-1230 Package (Eared) Functional Block Diagram Key Features • Frequency: 420 to 450 MHz • Output Power (P3dB)1: 1318 W • Linear Gain1: 25.9 dB • Typical PAE3dB1: 80.

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