QPD2025D Overview
250 um GaAs pHEMT 1 of 2 .qorvo. These ratings represent the maximum operable values for this device. Stresses beyond those listed under “ Ratings” may cause permanent damage to the device and/or affect device lifetime.
| Part number | QPD2025D |
|---|---|
| Datasheet | QPD2025D-Qorvo.pdf |
| File Size | 0.97 MB |
| Manufacturer | Qorvo |
| Description | Discrete GaAs pHEMT |
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250 um GaAs pHEMT 1 of 2 .qorvo. These ratings represent the maximum operable values for this device. Stresses beyond those listed under “ Ratings” may cause permanent damage to the device and/or affect device lifetime.
| Part Number | Description |
|---|---|
| QPD0005M | GaN RF Transistor |
| QPD0012 | Asymmetric Doherty |
| QPD0030 | GaN RF Power Transistor |
| QPD0305 | Dual GaN RF Transistor |
| QPD1003 | GaN RF IMFET |
| QPD1006 | RF IMFET |
| QPD1011 | 7W GaN RF Input-Matched Transistor |
| QPD1013 | GaN RF Transistor |
| QPD1018 | GaN RF IMFET |
| QPD1019 | GaN RF IMFET |