Datasheet Details
| Part number | QPD2025D |
|---|---|
| Manufacturer | Qorvo |
| File Size | 0.97 MB |
| Description | Discrete GaAs pHEMT |
| Datasheet |
 QPD2025D Datasheet
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| Part number | QPD2025D |
|---|---|
| Manufacturer | Qorvo |
| File Size | 0.97 MB |
| Description | Discrete GaAs pHEMT |
| Datasheet |
QPD2025D Datasheet
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250 um GaAs pHEMT 1 of 2 www.qorvo.com QPD2025D ® 250 um Discrete GaAs pHEMT Absolute Maximum Ratings1 Parameter Absolute Continuous Units Drain-Source Voltage (VDS)(2) 12 8 V Gate-Source Voltage (VGS) -7 -3 V Drain Current (IDS)(2) IDSS IDSS mA Forward Gate Current (IG,F) 12 2 W Channel Temperature (TCH)(3) 175(4) 150(5) °C Storage Temperature (TSTG) -65 to 150 -65 to 150 °C RF Input Power (PIN)(2) 18 At 3dB Compression dBm Power Dissipation (PTOT) 1.34 0.89 W Notes: 1.
These ratings represent the maximum operable values for this device.
Stresses beyond those listed und
® Product Overview The Qorvo QPD2025D is a discrete 250 micron pHEMT which operates from DC to 20 GHz.
The QPD2025D is fabricated using Qorvo’s proven standard 0.25 um power pHEMT production process.
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