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TGA2583-SM Datasheet 10w Gan Power Amplifier

Manufacturer: Qorvo

Overview: TGA2583-SM ® 2.7 to 3.7 GHz, 10 W GaN Power Amplifier Product Overview Qorvo’s TGA2583-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.7 GHz. The TGA2583-SM is designed using Qorvo’s production 0.25 μm GaN on SiC process (QGaN25). The TGA2583-SM typically provides 41.4 dBm of saturated output power, > 50% power-added efficiency, and 33 dB small signal gain. It can operate under both pulse and CW conditions. The TGA2583-SM is available in a low-cost, surface mount 32 lead 5 x 5 AIN QFN. It is ideally suited to support both mercial and defense related radar applications. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 ohms.

Datasheet Details

Part number TGA2583-SM
Manufacturer Qorvo
File Size 1.07 MB
Description 10W GaN Power Amplifier
Datasheet TGA2583-SM-Qorvo.pdf

General Description

2.7–3.7 GHz, 10 W GaN Power AEmvaplulifaietiron Board Data Sheet Rev.

G, May 2023 | Subject to change without notice 1 of 13 .qorvo.

® Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Value / Range 40 V −8 to 0 V 1530 mA −5.4 to 11.5 mA Power Dissipation (PDISS), 85 °C 27 W Input Power (PIN), CW, 50 Ω, 85 °C Input Power (PIN), CW, VSWR 10:1, VD = 28 V, 85 °C Mounting Temperature (30 Seconds) Storage Temperature 30 dBm 23 dBm 260 °C −55 to 150 °C Operation of this device outside the parameter ranges given above may cause permanent damage.

Key Features

  • Frequency Range: 2.7.
  • 3.7 GHz.
  • PSAT: 41.4 dBm.
  • PAE: 50 %.
  • Small Signal Gain: 33 dB.
  • Return Loss: 12 dB.
  • Bias: VD = 25.
  • 32 V (CW or Pulsed), IDQ = 175 mA.
  • Pulsed VD: PW = 100 us, DC = 10 %.
  • Package Dimensions: 5.0 x 5.0 x 1.625 mm Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 RF OUT 3 4 5 6 7 8 24 23 22 RF IN 21 20 19 18 17 9 10 11 12 13 14 15 16 Top View.

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TGA2583-SM Distributor