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TGA2813-CP - 100W GaN Power Amplifier

Datasheet Summary

Description

Qorvo’s TGA2813-CP is a packaged high-power S-Band amplifier fabricated on Qorvo’s QGaN25 0.25 um GaN on SiC process.

Operating from 3.1 to 3.6 GHz, the TGA2813-CP achieves 100 W saturated output power, a power-added efficiency of > 50 %, and power gain of 23 dB.

Features

  • Frequency Range: 3.1 .
  • 3. 6 GHz.
  • POUT: 50 dBm @ PIN = 27 dBm.
  • PAE: 51% @ PIN = 27 dBm.
  • Power Gain: 23 dB @ PIN = 27 dBm.
  • Bias: VD = +30 V, IDQ = 300 mA, VG =.
  • 3 V typical, Pulsed (PW = 15 ms, DC = 30 %).
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm.
  • Package base is pure Cu offering superior thermal management Performance is typical across frequency. Please reference electrical specification table and data plots for more d.

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Datasheet Details

Part number TGA2813-CP
Manufacturer Qorvo
File Size 574.68 KB
Description 100W GaN Power Amplifier
Datasheet download datasheet TGA2813-CP Datasheet
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TGA2813-CP 3.1 – 3.6 GHz 100 W GaN Power Amplifier Product Description Qorvo’s TGA2813-CP is a packaged high-power S-Band amplifier fabricated on Qorvo’s QGaN25 0.25 um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the TGA2813-CP achieves 100 W saturated output power, a power-added efficiency of > 50 %, and power gain of 23 dB. The TGA2813-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both short and long pulse conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. Functional Block Diagram Product Features • Frequency Range: 3.1 –3.
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