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TGA4549-SM - 10W GaN Power Amplifier

General Description

21.2

Data Sheet Rev.

© 2023 Qorvo US, Inc.

All rights reserved.

23.6 GHz 10 W GaN Power Amplifier A

Key Features

  • Frequency Range: 21.2.
  • 23.6 GHz.
  • PSAT (PIN=23 dBm): 40 dBm.
  • PAE (PIN=23 dBm): 20 %.
  • Small Signal Gain: 22 dB.
  • Large Signal Gain: 17 dB.
  • Integrated Power Detector.
  • Bias: VD1 = VD2 = VD3 = +28 V, ID1 + ID2 + ID3 = 300 mA.
  • Package Dimensions: 5.0 x 5.5 x 1.7 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applicatio.

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Datasheet Details

Part number TGA4549-SM
Manufacturer Qorvo
File Size 1.60 MB
Description 10W GaN Power Amplifier
Datasheet download datasheet TGA4549-SM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TGA4549-SM 21.2 – 23.6 GHz 10 W GaN Power Amplifier Product Overview Qorvo’s TGA4549-SM is a high frequency, high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15). The TGA4549-SM operates from 21.2 – 23.6 GHz and typically provides 10 W saturated output power with power-added efficiency of 20% and large-signal gain of 17 dB. This combination of high frequency performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The TGA4549-SM also has an integrated power detector to support system diagnostics and other needs. The TGA4549-SM is offered in a small 5x5.5 mm surface mount package, matched to 50Ω with integrated DC blocking capacitors on both RF ports simplifying system integration.