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TGF2023-2-01 - SiC HEMT

General Description

6 Watt GaN HEMT 1 of 23 www.qorvo.com TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain to Gate Voltage (VDG) 100 V Drain Voltage (VD) Gate Voltage Range (VG) 40 V 7 to 2 V Drai

Key Features

  • advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 dBm of saturated output power with power gain of 20.7 dB at 3 GHz. The maximum power added efficiency is 71.6 % which makes the TGF2023-2-01 appropriate for high efficiency.

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Full PDF Text Transcription for TGF2023-2-01 (Reference)

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TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from D...

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F2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-01 is designed using Qorvo’s proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 dBm of saturated output power with power gain of 20.7 dB at 3 GHz. The maximum power added efficiency is 71.6 % which makes the TGF2023-2-01 appropriate for high efficiency applications. Lead-free and RoHS compliant Functional Block Diagram 2 1 Key Features  Frequency Range: DC - 18 GHz  Out

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