Description
6 Watt GaN HEMT
1 of 23
www.qorvo.com
TGF2023-2-01
® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Drain to Gate Voltage (VDG)
100 V
Drain Voltage (VD) Gate Voltage Range (VG)
40 V
7 to 2 V
Drai
Features
- advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 dBm of saturated output power with power gain of 20.7 dB at 3 GHz. The maximum power added efficiency is 71.6 % which makes the TGF2023-2-01 appropriate for high efficiency.
TGF2023-2-01 Datasheet
