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TGM2635-CP - X-Band 100W GaN Power Amplifier

General Description

TGM2635-CP X-band 100 W GaN Power Amplifier 1 of 14 www.qorvo.com TGM2635-CP ® X-Band 100 W GaN Power Amplifier Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage Range (VG) 8 to 0 V Drain Current (ID) 16 A Gate Current (IG) Power Dissipa

Key Features

  • Frequency Range: 7.9.
  • 11 GHz.
  • PSAT: 50 dBm (PIN = 28 dBm).
  • PAE: 35% (PIN = 28 dBm).
  • Large Signal Gain: 22 dB (PIN = 28 dBm).
  • Small Signal Gain: 26 dB.
  • Bias: VD = 28 V, IDQ = 1.3 A.
  • Package Dimensions: 19.05 x 19.05 x 4.52 mm.
  • Performance Under Pulsed Operation Functional Block Diagram.

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Datasheet Details

Part number TGM2635-CP
Manufacturer Qorvo
File Size 926.58 KB
Description X-Band 100W GaN Power Amplifier
Datasheet download datasheet TGM2635-CP Datasheet

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TGM2635-CP ® X-Band 100 W GaN Power Amplifier Product Overview Qorvo’s TGM2635–CP is a packaged X-band, high power amplifier fabricated on Qorvo’s production 0.25um GaN on SiC process. The TGM2635–CP operates from 7.9 – 11 GHz and provides 100 W of saturated output power with 22.5 dB of large signal gain and greater than 35 % power– added efficiency. The TGM2635-CP is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure Cu base for superior thermal management. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGM2635-CP is ideally suited for both commercial and military X-Band radar systems, satellite communications systems, and data links. RoHS compliant. Key Features • Frequency Range: 7.