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UF4SC120030K4S - SiC JFET

General Description

The UF4SC120030K4S is a 1200V, 30mW G4 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • S (2) Marking UF4SC120030K4S w On-resistance RDS(on): 30mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 277nC w Low body diode VFSD: 1.22V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w TO-247-4L package for faster switching, clean gate waveforms Typical.

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Other Datasheets by Qorvo

Part Number Description
UF4C120070B7S SiC Cascode JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UF4SC120030K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 30 mohm Rev. B, January 2025 Description The UF4SC120030K4S is a 1200V, 30mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.