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UG3SC120009K4S - SiC Combo JFET

General Description

Qorvo's UG3SC120009K4S "Combo-FET" integrates both a 1200V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package.

This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET.

Key Features

  • 1 234 Part Number UG3SC120009K4S Package TO-247-4L S (2) Marking UG3SC120009K4S w Single digit RDS(on) w Normally-off capability w Improved speed control w Improved parallel device operation (3+ FETs) w Operating temperature: 175C (max) w High pulse current capability w Excellent device robustness w Silver-sintered die attach for excellent thermal resistance w Short circuit rated w AECQ Qualified Typical.

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DATASHEET UG3SC120009K4S CASE JG (4) CASE D (1) Silicon Carbide (SiC) Combo JFET - EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 7.6 mohm Rev. C, January 2025 Description Qorvo's UG3SC120009K4S "Combo-FET" integrates both a 1200V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low onresistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications.