UHB100SC12E1BC3N - SiC Cascode JFET

Product Overview

Qorvo

Datasheet Details

Part number	UHB100SC12E1BC3N
Manufacturer	Qorvo
File Size	1.57 MB
Description	SiC Cascode JFET
Datasheet	UHB100SC12E1BC3N Datasheet
Additional preview pages of the UHB100SC12E1BC3N datasheet.

Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

Marking UHB100SC12E1BC3N w On-resistance: RDS(on) = 9.4mW (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 1000nC w Low body diode voltage: VFSD = 1.4V w Low gate charge: QG = 170nC w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Typical.

📁 Similar Datasheet

UHB100SC12E1BC3-N - 1200V SiC Half-Bridge (UnitedSiC)
UHB10FT - Ultrafast Recovery Rectifier (Vishay Siliconix)
UHB20FCT - Dual Common-Cathode Ultrafast Recovery Rectifier (Vishay Siliconix)
UHBM45 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS15-1 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS15-2 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS30-1 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS30-2 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

Other Datasheets by Qorvo

Published: Apr 29, 2025 |