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UJ4C075060L8S - Silicon Carbide Cascode JFET

General Description

The UJ4C075060L8S is a 750V, 58mW G4 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • w On-resistance RDS(on): 58mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 70nC w Low body diode VFSD: 1.31V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 w MO-229 package for faster switching, clean gate waveforms Typical.

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Datasheet Details

Part number UJ4C075060L8S
Manufacturer Qorvo
File Size 1.16 MB
Description Silicon Carbide Cascode JFET
Datasheet download datasheet UJ4C075060L8S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UJ4C075060L8S TAB 1 8 TAB 8 1 G (1) KS (2) TAB D S (3-8) Part Number UJ4C075060L8S Package MO-229 Marking UJ4C075060 Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TOLL, 750V, 58 mohm Rev. D, January 2025 Description The UJ4C075060L8S is a 750V, 58mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs.