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UJ4SC075018L8S - SiC Cascode JFET

General Description

The UJ4SC075018L8S is a 750V, 18mΩ G4 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • w On-resistance RDS(on): 18mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 128nC w Low body diode VFSD: 1.14V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 w MO-229 package for faster switching, clean gate waveforms Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TOLL, 750 V, 18 mohm Rev B, January 2025 UJ4SC075018L8S TAB 1 8 TAB 8 1 G (1) KS (2) TAB D S (3-8) Part Number UJ4SC075018L8S Package MO-229 Marking UJ4SC075018 Description The UJ4SC075018L8S is a 750V, 18mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs.