UJ4SC075018L8S
Description
The UJ4SC075018L8S is a 750V, 18mΩ G4 Si C FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or Si C MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features w On-resistance RDS(on): 18m W (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 128n C w Low body diode VFSD: 1.14V w Low gate charge: QG = 37.8n C w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 w MO-229...
