Datasheet Summary
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3CG640, 3CG708
PNP Silicon High Frequency Middle Power Transistor
Features
: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. Make up push pull amplifying circuit with NPN. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Symbols
Total Dissipation Max. Collector Current
Ptot ICM
Junction Temperature
Tjm
Storage Temperature
Tstg
C-E Breakdown...