3CG708 Datasheet Text
3CG708
PNP Silicon High Frequency Middle Power Transistor
Features
: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. Make up push pull amplifying circuit with NPN. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name Symbols Unit
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature Tjm °C
Storage Temperature Tstg °C
C-E Breakdown Voltage V(BR)CEO V
E-B Breakdown Voltage V(BR)EBO V
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
C-E Leakage Current ICEO uA
DC Current Gain hFE
Transition frequency fT MHz
Specifications
800 600 175 -55~+175
60
8
0.7
1.0
25~~270
100
(Ta = 25°C )
Test Condition
Ta=25°C...