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3DD166 - NPN Silicon Low Frequency High Power Transistor

This page provides the datasheet information for the 3DD166, a member of the 3DD164 NPN Silicon Low Frequency High Power Transistor family.

Datasheet Summary

Features

  • 1. Using triple-diffusion process. Excellent capacity in anti-burnout. Excellent second breakdown capacity. 2. Good temperature stability. Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+.

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Datasheet Details

Part number 3DD166
Manufacturer Qunli Electric
File Size 32.95 KB
Description NPN Silicon Low Frequency High Power Transistor
Datasheet download datasheet 3DD166 Datasheet
Additional preview pages of the 3DD166 datasheet.

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Full PDF Text Transcription

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD164(166), 3DD167(169) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: Parameter name Symbols Unit Collector-Emitter Voltage VCEO V Collector-Emitter Breakdown Voltage V(BR)CEO V C-Base Breakdown Voltage V(BR)CBO V Emitter-Base Voltage Max. Collector Current Max.
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