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2N3600 - RF Power Transistors

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Datasheet Details

Part number 2N3600
Manufacturer RCA
File Size 254.36 KB
Description RF Power Transistors
Datasheet download datasheet 2N3600 Datasheet

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File No. 83 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ ffilrnLJD Solid State Division RF Power Transistors 2N918 2N3600 RCA-2N918 and RCA-2N3600 are double-diffused epitaxial planar transistors of the silicon n-p-n type. They are extremely useful in low-noise-amplifier, oscillator, and converter applications at VHF frequencies. These devices utilize a hermetically sealed fourlead JEDEC TO-72 package. All active elements of the transistor are insulated from the case, which may be grounded by means of the fourth lead in applications requiring minimum feedback capacitance, shielding of the device, or both. MAXIMUM RATINGS, Absolute-Maximum Values: 2N918 2N3600 COLLECTOR-TD-BASE VOLTAGE, VCSO' . . . . . . . . . .. 30 30 mnx. V COLLECTOR-1'D-EMITTER VOLTAGE, VCEO' ..