2N5262 - Power Transistors

RCA

Key Features

"Modified TO-ag".
Fast switching at lA: ton = 30 ns max. toft. = 60 ns max.
High voltage ~tings.
High. . poweripation.
atings.
High dc beta at lA - 25 min.
Low saturation voltage at 1 A: 0.5 V typo.
Maximum.
area-af-operation curves for de and pulse operation.
Hermetic "low-profile T()'39" package.
Meets MI L-5-19500 specifications RCA.
2N5262- is a silicon n-p.
n, epitaxial planar. tranSlstorwith charac.

2N5262 power transistors by RCA - Datasheet Preview

Datasheet Details

Part number	2N5262
Manufacturer	RCA
File Size	361.48 KB
Description	Power Transistors
Datasheet	2N5262 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N526	PNP Transistor	Motorola
2N526	PNP Germanium Transistors	Central Semiconductor
2N5264	Silicon NPN Power Transistors	SavantIC
2N5265	GENERAL PURPOSE P-CHANNEL JFET	Motorola
2N5265	P-Channel junction depletion mode FET	ETC

Other Datasheets by RCA

Part Number	Description
2N5202	Power Transistors
2N5293	Power Transistors
2N5295	Power Transistors
2N5297	Power Transistors
2N5034	Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 313 oornm Power Transistors Solid State Division 2N5262 Silicon N-P-N High-Speed Switching Transistor For Memory-Driver Service in Data-Processing Equipment and Other Critical Industrial Applications Features: "Modified TO-ag" • Fast switching at lA: ton = 30 ns max. toft.= 60 ns max. • High voltage ~tings • High..power.....ipation .•atings • High dc beta at lA - 25 min. • Low saturation voltage at 1 A: 0.5 V typo • Maximum·area-af-operation curves for de and pulse operation • Hermetic "low-profile T()'39" package • Meets MI L-5-19500 specifications RCA·2N5262- is a silicon n-p·n, epitaxial planar.