Datasheet4U Logo Datasheet4U.com

2N5295 - Power Transistors

Download the 2N5295 datasheet PDF. This datasheet also covers the 2N5293 variant, as both devices belong to the same power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • o Low saturation voltage- YeE(sat) = 1 Y max. at Ie = 0.5 A (21'15293, 21'15294) = 1 Y max. at Ie = 1 A (21'15295, 21'15296) = 1 Y max. at Ie =' 1.5 A (21'15297, 21'15298) 0YERSAWATT package (molded-silicone plastic) o Maximum safe-area-of-operation curves specified for DC and pulse service RCA-2N5293, 2N5294, 2N5295. 2N5296. 2N5297 and 2N5298.
  • are hometaxial-base silicon n-p-n transistors. They are intended for a wide variety of mediumpower switching and amplifier.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5293-RCA.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5295
Manufacturer RCA
File Size 685.25 KB
Description Power Transistors
Datasheet download datasheet 2N5295 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
File No. 322 OO(]5LJD Solid State Division Power Transistors 2N5293 2N5294 2N5295 2N5296 2N5297 2N5298 22NN55229953 2N5297 ~ For TO-66 Sockets JEOEC TO·220AA 22NN55229946 2N5298 ~ JEOEC TO·220AB lHIometaxial-Sase, Silicon N-P-N VERSAWATT Transistors General·Purpose Types for Medium-Power Switching and Amplifier Applications in Military, Industrial, and Commercial Equipment . FEATURES o Low saturation voltage- YeE(sat) = 1 Y max. at Ie = 0.5 A (21'15293, 21'15294) = 1 Y max. at Ie = 1 A (21'15295, 21'15296) = 1 Y max. at Ie =' 1.5 A (21'15297, 21'15298) 0YERSAWATT package (molded-silicone plastic) o Maximum safe-area-of-operation curves specified for DC and pulse service RCA-2N5293, 2N5294, 2N5295. 2N5296. 2N5297 and 2N5298* are hometaxial-base silicon n-p-n transistors.