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File No. 359 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
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Power Transistors
Solid State Division
2N5575 2N5578
Modified JEDEC TO-3 (O.060·ln.-Dia. Pins)
H·1811
High-Current, High-Power, Hometaxial-Base Silicon N-P-N Transistors
For Linear and Switching Applications in Military, Commercial, and Industrial Equipment Features:
II Maximum safe-area-of operation curves
II ISIb-limit line beginning at 25 V II High-current capability
a Low saturation voltage at high beta a High-dissipation capability a Low thermal resistance
RCA-2N5575 and 2N5578° are high,current, high-power, hometaxial-base silicon n-p-n transistors. They differ in maximum voltage and current ratings.
2N5575 Datasheet
