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2N5805 - Power Transistors

Download the 2N5805 datasheet PDF. This datasheet also covers the 2N5804 variant, as both devices belong to the same power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • JEDEC TO-3 . . Power dissipation (PT) = 110 W at SO V.
  • High-voltage ratings: VCEO(sus) = 300 V max. (2NS80S) = 22S V max: (2NS804) a Maximum-operating-area curves. . for selection of maximum operating conditions for operation free from second breakdown. RCA types 2NSB04 and 2NSB05.
  • are silicon n-p-n transistors with high breakdown-voltage ratings and fast switching speeds. Both devices employ the popular TO-3 package; they differ in breakdown-voltage ratings and leakage-currp.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5804-RCA.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5805
Manufacturer RCA
File Size 327.19 KB
Description Power Transistors
Datasheet download datasheet 2N5805 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
File 1'10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OO(]5LJD Solid State Division Power Transistors 2N5804 2N5805 High-voltage, High~.Power Silicon N-P-N Power Transistors For Switching and Amplifier Applications Features: JEDEC TO-3 .. Power dissipation (PT) = 110 W at SO V • High-voltage ratings: VCEO(sus) = 300 V max. (2NS80S) = 22S V max: (2NS804) a Maximum-operating-area curves. .for selection of maximum operating conditions for operation free from second breakdown. RCA types 2NSB04 and 2NSB05** are silicon n-p-n transistors with high breakdown-voltage ratings and fast switching speeds. Both devices employ the popular TO-3 package; they differ in breakdown-voltage ratings and leakage-currpnt values.