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2N6389 - RF Transistor

Key Features

  • Low noise figure: NF = 3 dB (typ. ) at 450 MHz, 1.5 mA = 4 dB (typ. ) at 890 MH~, 1.5 mA = 6 dB (typ. ) at 890 MHz, 10 mA.
  • High gain (tuned, unneutralized): GpE = 15 dB (min. ) at 890 MHz RCA 2N638ge is an epitaxial silicon n-p-n planar transistor intended for low-power, small-signal.

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Datasheet Details

Part number 2N6389
Manufacturer RCA
File Size 173.62 KB
Description RF Transistor
Datasheet download datasheet 2N6389 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 617 rnrnLJD Solid State Division RF Transistors 2N6389 I,~',~I~i~ ,I II 'I /1 J JEDECTO-72 H-1299 UHF/MATV Low-Noise Silicon N-P-N Transistor For High-Gain Small'Signal Applications in UHF TV RF Amplifiers and UHF MATV Amplifiers Features: • Low noise figure: NF = 3 dB (typ.) at 450 MHz, 1.5 mA = 4 dB (typ.) at 890 MH~, 1.5 mA = 6 dB (typ.) at 890 MHz, 10 mA • High gain (tuned, unneutralized): GpE = 15 dB (min.) at 890 MHz RCA 2N638ge is an epitaxial silicon n-p-n planar transistor intended for low-power, small-signal applications where both low noise and high gain are desirable. It utilizes a hermetically sealed four-lead JEDEC TO-72 package.