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OOCD3LJ1]
Solid State Division
Power Transistors
2N6479 2N6481 2N6480 2N6482
Radiation-Hardened Silicon N-P-N Power Transistors
Epitaxial-Planar Types for Aerospace and Military Applications
(RADIALI H·1354
Rated for Operation in Radiation Environment. with Cumulative Neutron Fluenee Levels to 1 x 1014 Neutrons/em2 and Gamma Intensity to 1 x 108 Rad(Sills
RCA types 2N6479, 2N6480, 2N6481, and 2N6482- are epitaxial silicon n-p-n planar power-switching transistors.
They are designed for aerospace applications in which they might be subjected to extreme neutron and gamma-ray exposure.
The 2N6479, 2N6480, 2N6481, and 2N6482 are intended for use in 5-to-10 ampere high-frequency power inverter service.
2N6479 Datasheet
