2N6480 Datasheet | RCA

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 702 OOCD3LJ1] Solid State Division Power Transistors 2N6479 2N6481 2N6480 2N6482 Radiation-Hardened Silicon N-P-N Power Transistors Epitaxial-Planar Types for Aerospace and Military Applications (RADIALI H- 1354 Rated for Operation in Radiation Environment. with Cumulative Neutron Fluenee Levels to 1 x 1014 Neutrons/em2 and Gamma Intensity to 1 x 108 Rad(Sills RCA types 2N6479, 2N6480, 2N6481, and 2N6482- are epitaxial silicon n-p-n planar power-switching transistors. They are designed for aerospace applications in which they might be subjected to extreme neutron and gamma-ray exposure. The 2N6479, 2N6480, 2N6481, and 2N6482 are intended for use in 5-to-10 ampere high-frequency power inverter service. Types 2N6479 and 2N6481 differ from types 2N6480 and 2N6482. respectively. in voltage and power ratings. In types 2N6479 and 2N6480, the collector is isolated from the case. - Formerly RCA Dev. Nos. TAB007, TAS007B, TAB10D, and TA8100B. respectively. MAXIMUM RATINGS, Absolute- Maximum Values: - COLLECTOR- TO- BASE VOLTAGE - . . . COLLECTOR- TO- EMITTER SUSTAINING VOLTAGE: With external base- to- emitter resistance (RBEI ::;; 100 n . With base open- . . . . - EMITTER- TO- BASE VOLTAGE - CONTINUOUS COLLECTOR CURRENT - PEAK COLLECTOR CURRENT. - CONTINUOUS BASE CURRENT . - TRANSISTOR DISSIPATION: At case temperati Jres up to 25°C. At case temperatures above 25°C - TEMPERATURE RANGE: Storage and Operating (Junction)- . . . - TERMINAL TEMPERATURE (During Soldering): At distance ~ 1/32 in. (0.8 mml from seating plane for l Os max. VCBO VCER(sus) VCEO(susl VEBO 'C - In accordance with JEDEC registration data format JS-6 ROF-1. 2N6479 100 2N6480 100 2N6481...