Datasheet Summary
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 302
DDJ]3LJD
Solid State Division
Power Transistors
40537 40538
3J
40537L 40538L JEDEC TOoS
H- 13BO
40537S 40538S JEDEC TO-39
H- t381
Silicon P-N-P Transistors
For Driver and Output Stages in Audio-Amplifier Circuits
Features
:
- Planar construction provides low-noise and low- leakage characteristics
- Gain bandwidth product (fT) = 50 MHz min.
- 40538 is p- n- p plement of 40539' rTh-_-d-'-Yic-"-,-,,-,,,-j-'.-b-',-w-i-Ih-'-i-lh-er-.-,%-...,
- Low saturation voltage: VCE(sat) = -1.1 V max. (40537) = -2.0 V max. (40538)
- High pulse beta at high collector current: hFE = 50 min. at IC = -50 mA (40537) inch I.ads...