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41506 - Power Transistors

Key Features

  • Maximum safe-area-of-operation curves a Low saturation voltage: VCE(satl ~ 1.5 V (max. ) . . High voltage rating: VCEO(SUS) ~ 200 V.
  • High dissipation rating: PT ~ 100 W The RCA-41506 is an epitaxial silicon n-p-n power transistor utilizing a multiple-emitter- site structure. This device employs the popular JEDEC TO-3 package. The 41506 features high breakdown-voltage ratings and low saturation-voltage values and is especially suitable for use in inverters, switching regulator.

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Datasheet Details

Part number 41506
Manufacturer RCA
File Size 250.85 KB
Description Power Transistors
Datasheet download datasheet 41506 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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File No. 776 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ DDJIDLJD Solid State Division Power Transistors 41506 High-Voltage, High-Power Silicon N-P-N Power Transistor For Switching and Linear Applications JEOEC TO-3 Features: • Maximum safe-area-of-operation curves a Low saturation voltage: VCE(satl ~ 1.5 V (max.) .. High voltage rating: VCEO(SUS) ~ 200 V • High dissipation rating: PT ~ 100 W The RCA-41506 is an epitaxial silicon n-p-n power transistor utilizing a multiple-emitter- site structure. This device employs the popular JEDEC TO-3 package.