RCA1001
Overview
- High de current gain: hFE = 1000 min_ at IC = 3 A
- Monolithic construction with built-in bas8e smitter shunt resistors RCA-l000 and 1001 are monolithic silicon n-p-n Darlington transistors intended for medium-power applications as output devices. The double epitaxial construction of these units provides good forward and reverse second-breakdown capability_ Their high gain makes it possible for them to be driven directly from integrated circuits. , , II II II :I II IIL _ __3 _ka _ _1113_00.n_ _ _ -1 92:CS-19945RI Fig.1-Schematic diagram of RCA-toDD and RCA
- 1001 Darlington power transistors.
