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RCA1001 - Power Transistor

Download the RCA1001 datasheet PDF. This datasheet also covers the RCA1000 variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High de current gain: hFE = 1000 min_ at IC = 3 A.
  • Monolithic construction with built-in bas8e smitter shunt resistors RCA-l000 and 1001 are monolithic silicon n-p-n Darlington transistors intended for medium-power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RCA1000-RCA.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RCA1001
Manufacturer RCA
File Size 145.08 KB
Description Power Transistor
Datasheet download datasheet RCA1001 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 594 DDLn3LJD Solid State Division Power Transistors RCA1000 RCA1001 a-Ampere Silicon N-P-N Darlington Power Transistors For Use as Output Devices in General-Purpose Switching and Amplifier Applications JEOEC TO·3 Features: • High de current gain: hFE = 1000 min_ at IC = 3 A • Monolithic construction with built-in bas8e smitter shunt resistors RCA-l000 and 1001 are monolithic silicon n-p-n Darlington transistors intended for medium-power applications as output devices. The double epitaxial construction of these units provides good forward and reverse second-breakdown capability_ Their high gain makes it possible for them to be driven directly from integrated circuits.