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Solid State Division
Power Transistors
RCA30 RCA30B RCA30A RCA30C
Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors
For Power-Amplifier and High·Speed·Switching Applications
Features:
JEDEC TO·220AB
H·1535
• 30 Wat 25°C case temperature • 3 A rated collector current • Min. fT of 3 MHz at 10 V, 200 mA • Designed for complementary use with RCA29,
RCA29A, RCA29B, and RCA29C· n·p·n types*
RCA30, RCA30A, RCA30B, and RCA30C are epitaxial·base, silicon p·n·p transistors. They are intended for a wide variety of switching and amplifier applications, such as series and shunt regulators and driver and output stages of high·fidelity amplifiers.
These new plastic power transistors are designed for com· plementary use with devices in the RCA29 series.
RCA30B Datasheet
