Click to expand full text
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _-File No. 585
oocraLJD
Solid State Division
Power Transistors
RCA31 RCA318 RCA31A RCA31C
Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors
For Power-Amplifier and High-Speed-Switching Applications
Features:
JEDEC TO-220 AB
• 40 W at 2SDC case temperature • S A rated collector current • Min.fTof3MHzatl0V,SOOmA • Designed for complementary use with RCA32,
RCA32A, RCA32B, and RCA32C p-n-p types*
RCA3l, RtA31A, RCA31B, and RCA31C are epitaxial-base, silicon p-n-p transistors. They are intended for a wide variety of switching and amplifier applications. such as series and shunt regulators and driver and output stages of high-fidelity amplifiers.
RCA31A Datasheet
