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RCA410 - Power Transistor

Features

  • Maximum safe-area-of-operation curves II Low saturation voltage: VCE(satl = 0.8 V (max. ) II High voltage rating: VCEO(sus) = 200 V.
  • High dissipation rating: PT = 125 W RCA-410 is an epitaxial silicon n-p-n power transistor utilizing a multiple-emitter-site structure. This device employs the popular JED EC TO-3 package. Featuring high breakdown-voltage ratings and low saturation- voltage values, the RCA-410 is especially suitable for use in inverters, deflection circuits, sw.

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Datasheet Details

Part number RCA410
Manufacturer RCA
File Size 330.38 KB
Description Power Transistor
Datasheet download datasheet RCA410 Datasheet

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Full PDF Text Transcription

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File No. 509 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OOm5LJD Solid State Division Power Transistors RCA41 0 ,- il-'I--~I. '' t il. .•" . . . ~~ . ... •~.<'C~""-""•.. 1 JEDEC TD·3 High-Voltage, High-Power Silicon N-P-N Power Transistor For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Features: • Maximum safe-area-of-operation curves II Low saturation voltage: VCE(satl = 0.8 V (max.) II High voltage rating: VCEO(sus) = 200 V • High dissipation rating: PT = 125 W RCA-410 is an epitaxial silicon n-p-n power transistor utilizing a multiple-emitter-site structure. This device employs the popular JED EC TO-3 package.
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