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RCA431 - Power Transistor

Features

  • CI Maximum safe-area-of operation curves " Low saturation voltage: VCE(sat) = 0.7 V (max. ) " High voltage rating: VCEO(sus) = 325 V " High dissipation rating: PT = 125 W RCA-431 is an epitaxial silicon n-p-n power transistor utilizing a multiple-emitter-site structure. This device employs the popular JEDEC TO-3 package. Featuring high breakdown-voltage ratings and low saturation- voltage values, the RCA-431 is especially suitable for use in inverters, deflection circuits, switching regulators.

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Datasheet Details

Part number RCA431
Manufacturer RCA
File Size 429.16 KB
Description Power Transistor
Datasheet download datasheet RCA431 Datasheet

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Full PDF Text Transcription

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File No. 513 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OO(]500 Solid State Division Power Transistors RCA431 High-Voltage, High-Power Silicon N..P..NPower Transistor For Switching and Linear Applications in Military, Industrial, and Commercial Equipment JEDEC TO·3 Features: CI Maximum safe-area-of operation curves " Low saturation voltage: VCE(sat) = 0.7 V (max.) " High voltage rating: VCEO(sus) = 325 V " High dissipation rating: PT = 125 W RCA-431 is an epitaxial silicon n-p-n power transistor utilizing a multiple-emitter-site structure. This device employs the popular JEDEC TO-3 package.
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