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RCP111 - Power Transistors

Key Features

  • CI Low Miller feedback capacitance: Cb'c = 2.25 pF max. CI Thermal-cycling ratings e Maximum safe-area-of-operation curves " High gain-bandwidth product: fT = 80 MHz typo IHUgh-Voltage, Medium-Power Silicon N-P-N Power Transistors For TV Video Output and Linear-Amplifier.

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Datasheet Details

Part number RCP111
Manufacturer RCA
File Size 589.62 KB
Description Power Transistors
Datasheet download datasheet RCP111 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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File No. 822 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OO(]5LlD Solid State Division Power Transistors RCIP1 'II 'II , RCP113, RCP115, IRCIP1I17 Series H·1824 Features: CI Low Miller feedback capacitance: Cb'c = 2.25 pF max. CI Thermal-cycling ratings e Maximum safe-area-of-operation curves " High gain-bandwidth product: fT = 80 MHz typo IHUgh-Voltage, Medium-Power Silicon N-P-N Power Transistors For TV Video Output and Linear-Amplifier Applications ~VCEO (V) 50-300 350 RCPll10 300 RCPlllC 250 RCPll1B 200 RCplllA 100 - At VCE = 10 V. IC =_25 rnA 30-150 50 min. 20 min. RCP113D RCP113C RCP113B RCP113A - - RCPl15B - RCP115 - RCP117B - RCP117 Note: Characteristics charts for individual device types show hFE measured at additional current levels.