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RCS564 - Power Transistors

Key Features

  • High voltage ratings: VCBO= 300 V.
  • Maximum safe-area-of-operation curves.
  • High dissipation rating: PT = 175 W.
  • Low saturation voltages The RCA-RCS564 is a multiple epitaxial silicon n-p-n power transistor utilizing a multiple-emitter-site structure_ Multipleepitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds_ Multipleemitter-site design assureS uniform current flow throughout the structure, which.

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Datasheet Details

Part number RCS564
Manufacturer RCA
File Size 583.39 KB
Description Power Transistors
Datasheet download datasheet RCS564 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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oornLJO Solid State Division File No. 779 Power Transistors RCSS64 300-V, 30-A, 17S-W Silicon N-P-N Switching Transistor For Switching Applications in Industrial and Commercial Equipment JEDECTO-3 H-1570 Features: • High voltage ratings: VCBO= 300 V • Maximum safe-area-of-operation curves • High dissipation rating: PT = 175 W • Low saturation voltages The RCA-RCS564 is a multiple epitaxial silicon n-p-n power transistor utilizing a multiple-emitter-site structure_ Multipleepitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds_ Multipleemitter-site design assureS uniform current flow throughout the structure, which produces a high ISlb and a large safeoperation area. The device uses the popular JEDEC TO-3 package.