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RCS882 - Power Transistors

Key Features

  • Maximum safe-area-of-operation curves.
  • High voltage ratings: VCEO(sus) = -300 V max. The RCA.
  • RCS882 is an epitaxial silicon p-n.
  • p transistor with high breakdown voltages, high frequency response, and fast switching speeds. This device is provided in the JEDEC TO.
  • 39 hermetic package. Typical.

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Datasheet Details

Part number RCS882
Manufacturer RCA
File Size 334.78 KB
Description Power Transistors
Datasheet download datasheet RCS882 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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File No. 781 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OO(]3LJD Solid State Division Power Transistors RCS882 JEDEC TO-39 High-Voltage Silicon, P-N-P Transistor For High·Speed Switching and Linear-Amplifier Applications in Industrial and Commercial Equipment Features: • Maximum safe-area-of-operation curves • High voltage ratings: VCEO(sus) = -300 V max. The RCA·RCS882 is an epitaxial silicon p-n·p transistor with high breakdown voltages, high frequency response, and fast switching speeds. This device is provided in the JEDEC TO·39 hermetic package. Typical applications include high·voltage differential and oper· ational amplifiers; high·voltage inverters; and high·voltage, low· current switching and series regulators.