S5210B Overview
Key Features
- Fast turn-off time
- Low - High di/dt and dv/dt capabilities
- Center gate construction
- Shortad-emittar gate
- cathode construction rapid uniform gate-current spreading for
- contains an internally diffused resistor faster turn
- on with substantially reduced between gate and cathode heating effects Anode ~Package 200 V 400 V 600 V Stud H
- types are all
- diffused, silicon controlled cations such as inverters, switching regulators, and high
- rectifiers designed for high
