FEATURES
: Symbol V IT(RMS) VDRM/VRRM IGT(Q1) alue 0.8 600 5 Unit A V mA DESCRIPTION
Thanks to low gate triggering current, it can be directly driven by microcontrollers. MT 2 G Units:mm MT 1 Main T erminal 1 Gate Main T erminal 2 TO-92 ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) ITSM ItI dI/dt IGM PG(AV) Tstg Tj 2 Parameter RMS on-state current (full sine wave) Non repetitive surge peak on current (full cycle, Tj initial=25 2 Value Unit TI=50 F=50Hz t=20ms F=60Hz t=16.7ms tp=10ms F=120Hz Tj=1 tp=20 sT 10 j=110 Tj=110 20 1 0.1 -40 to +150 -40 to +110 0.8 9 9.5 0.45 A A As A/ A W s 2 -state ) t Value for fusing Critical rate of rise of on-st ate current IG=2*IGT, tr 100ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 1/4 YKKJPD-V2.1 ® Z0607 ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified) Symbol IGT(1) VD=12V R L=30 VGT VGD IH(2) I IL dV/dt(2) V (dV/dt)c(2) VD=VDRM T Test condition Quadrant - IV ALL MAX.
RCR
